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| PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES * SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package LOW HEIGHT PROFILE Just 0.55 mm high FLAT LEAD STYLE: Reduced lead inductance improves electrical performance HIGH COLLECTOR CURRENT: IC MAX = 65 mA UPA808TC DESCRIPTION The UPA808TC contains two NE687 NPN high frequency silicon bipolar chips. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascode LNAs and other applications. * * * OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TC (Top View) 1.500.1 1.100.1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW C C RATINGS 20 10 1.5 1.500.1 0.20 +0.1 -0.05 65 0.96 0.48 1 6 TBD TBD 150 -65 to +150 0.48 2 5 TJ TSTG 3 4 PIN OUT 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Emitter Q2 5. Base Q2 6. Base Q1 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 0.11+0.1 0.550.05 -0.05 ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE fT Cre |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz pF dB dB 7 UNITS A A 70 9 100 11 0.4 8.5 1.3 2 0.8 MIN UPA808TC TC TYP MAX 0.1 0.1 140 Notes: 1.Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA808TC-T1, 3K per reel. California Eastern Laboratories UPA808TC NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1, Q2 8e-17 128 1 17 0.18 3.3e-15 1.48 9.05 1.05 4.3 0.009 4e-15 1.5 0.8 11.1 2.46 0.017 7.5 0.415e-12 0.68 0.53 0.102e-12 0.29 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1, Q2 0.53 1 0 0.75 0 0.37 8e-12 11.9 9.55 1.78 69.1 1e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 7.0 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 02/01 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UPA808TC SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 LC Pin_1 0.05 nH 0.26 pF CCB1 LB1 C_C1E1 0.05 pF LE Pin_2 0.05 nH CCE1 0.19 pF LE1 0.95 nH C_E1B2 0.1 pF LB2 0.7 nH C_B1B2 0.05 pF LB 0.05 nH C_B2E2 0.05 pF LE2 0.8 nH 0.19 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 LE 0.05 nH Pin_4 Pin_5 LB 0.05 nH Pin_6 Q1 0.45 nH C_E1C2 0.05 pF CCB2 0.26 pF Q2 LC Pin_3 0.05 nH MODEL RANGE Frequency: 0.1 to 7.0 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 02/01 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 12/11/2001 |
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